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The onsemi MUN5215T1G is an NPN Bias Resistor Transistor (BRT) housed in a surface-mount SOT-323 (SC-70) package. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. Key electrical parameters include a maximum collector current (IC) of 100 mA, a collector-emitter voltage (VCEO) of 50 V DC, and a collector-base voltage (VCBO) of 50 V DC. The device features a minimum DC current gain (hFE) of 160, a typical input resistance of 10 kOhms, and a power dissipation (Pd) rating of 230 mW to 385 mW depending on thermal conditions. It operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix when purchasing. The 'T1' suffix indicates a 7-inch reel containing 3,000 units, whereas 'T3' denotes a 13-inch reel with 10,000 units. Confirm RoHS compliance status as historical data varies by revision. Ensure the supplier provides official datasheets matching the exact part number to avoid discrepancies in pinout or electrical characteristics.
Select this component when a compact NPN solution with integrated biasing is required for space-constrained designs. The 10 kOhm typical input resistance suits standard logic levels. Compare against the MUN5215DW1T1G if a dual configuration in an SOT-363 package is preferred. Verify that the 100 mA continuous current rating meets the load requirements of the target application.
This device belongs to the MUN5215 series of Bias Resistor Transistors from onsemi. It serves as a direct replacement for discrete transistor-resistor combinations. Related parts in the family include the MUN5211 and MUN5216 variants, which offer different resistance ratios. The product line targets automotive and industrial sectors where reliability and board space reduction are critical.
The MUN5215DW1T1G offers a dual configuration in an SOT-363 package. Other single NPN BRTs like the MUN2213T1G provide similar voltage ratings but differ in resistance values and hFE specifications. Verify pin compatibility before substitution.