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The onsemi MUN5216T1 is an NPN silicon Bias Resistor Transistor (BRT) housed in the SC-70/SOT-323 package. It integrates a single transistor with a monolithic bias network consisting of a series base resistor and an open base-emitter path. Key electrical ratings include a collector-base voltage (VCBO) of 50 Vdc, a collector-emitter voltage (VCEO) of 50 Vdc, and a maximum collector current (IC) of 100 mAdc. The device features a minimum DC current gain (hFE) of 160 at IC = 5.0 mA and VCE = 10 V. Thermal characteristics specify a total device dissipation (PD) of 202 mW at 25°C ambient temperature, with a junction-to-ambient thermal resistance (RθJA) of 618 °C/W. The operating temperature range spans from -55°C to +150°C.
Verify component authenticity by checking the marking code '8F' against official documentation. Confirm the presence of Pb-free packaging if required by assembly specifications. Ensure ordering suffixes match the specific tape and reel quantities defined in the manufacturer's data sheet.
Select this component when circuit design requires simplification through reduced board space and lower component count. The integrated bias network eliminates external resistors, streamlining the schematic. Verify that the 50 V voltage rating and 100 mA current capacity align with the target application requirements.
This device belongs to the MUN5211T1 Series of NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Networks. The series is engineered to consolidate multiple discrete parts into a single surface-mount unit, facilitating automated assembly and reducing overall system manufacturing costs.
MUN5216T1G serves as the lead-free equivalent within the same series. Cross-reference with other BRTs in the series such as MUN5211T1 or MUN5212T1 only if internal resistor values are compatible with the existing circuit design.