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The MUN5216T1G is an NPN Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. It operates with a maximum collector-emitter voltage of 50 Vdc and continuous collector current of 100 mAdc. The device features a typical DC current gain of 350 at 5 mA and 10 V, with a minimum of 160. The integrated base resistor R1 has a nominal value of 4.7 kOhms. Total power dissipation is rated at 202 mW at 25°C in the SC-70/SOT-323 package.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package type and shipping configuration. Confirm that the requested variant matches the required automotive or standard qualification status if applicable. Ensure compliance with current environmental directives such as RoHS before finalizing procurement specifications.
Select this component when a compact NPN digital transistor solution is required for low-power applications. Verify that the 50 V collector-emitter voltage and 100 mA continuous current ratings meet the circuit requirements. Consider the thermal characteristics and derating curves if operating at elevated ambient temperatures above 25°C.
This device belongs to the MUN5216 series of digital transistors manufactured by onsemi. It is part of a family designed to simplify biasing networks by integrating resistors directly onto the silicon die. The series includes various package options such as SC-59, SOT-23, and SC-70 to accommodate different footprint constraints.
Direct replacements within the same series include other MUN5216 variants with different packaging, such as MMUN2216L in SOT-23 or MUN2216 in SC-59. Cross-series equivalents like DTC143T may be considered if pinout and electrical parameters align with the application requirements.