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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SC70-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：1 kOhms
- Resistor - Emitter Base (R2)：1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：3 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：202 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70-3 (SOT323)
Download product information
Overview
The MUN5230T1G is a Bias Resistor Transistor (BRT) featuring an NPN silicon transistor integrated with a monolithic bias resistor network. It replaces discrete components by combining a single transistor with series base and base-emitter resistors. The device operates with a collector-emitter voltage of 50 Vdc and continuous collector current of 100 mAdc. Electrical characteristics include a typical DC current gain of 5.0 at 5.0 mA, input resistance of 1.0 kOhm, and a resistor ratio of 1.0. Thermal dissipation is rated at 202 mW at 25°C in the SC-70 package.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias network consisting of two resistors to eliminate external components.
- Designed to simplify circuit design while reducing board space and component count.
- Available with S and NSV prefixes for automotive applications requiring AEC-Q101 qualification and PPAP capability.
Applications
- Low power surface mount applications where board space is limited
- Automotive electronics requiring unique site and control change requirements
- General purpose digital switching circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and shipping configuration. Confirm RoHS compliance status and Pb-Free designation as indicated in the datasheet. Ensure the part marking matches the specified code for the selected package style before procurement.
Selection Notes
Select this component when a compact solution is required to replace a discrete transistor and its associated bias resistors. Consider the thermal derating curves provided for the SC-70 package when designing for high ambient temperatures. Verify that the internal resistor values meet the specific logic interface requirements of the target application.
Part Context
This component belongs to the MUN5230 series of digital transistors manufactured by onsemi. It shares functional similarities with other BRT devices such as the MUN2230 and DTC113E, which utilize different packaging options like SOT-23 or SC-75. The series is designed to offer consistent performance across various surface mount form factors.
Replacement Considerations
MUN2230T1G
FAQ
What is the function of the internal resistors in the MUN5230T1G?
The internal resistors form a monolithic bias network consisting of a series base resistor and a base-emitter resistor, eliminating the need for external discrete components.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is rated at 50 Vdc.
Is the MUN5230T1G suitable for automotive applications?
Yes, versions with the S and NSV prefixes are AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
