MUN5231T1

MUN5231T1

  • Description:TRANS PREBIAS NPN 50V SC70-3
  • Series:-

SKU:96d4d2ca988b Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SC70-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:8 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:202 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70-3 (SOT323)

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MUN5231T1

Overview

The onsemi MUN5231T1 is a single NPN Bias Resistor Transistor (BRT) housed in an SC-70/SOT-323 package. It integrates a monolithic bias network consisting of a series base resistor and a base-emitter resistor to replace discrete components. Key electrical ratings include a collector-emitter voltage of 50 Vdc, a continuous collector current of 100 mAdc, and a total device power dissipation of 202 mW at 25°C. The typical input resistors are 2.2 kOhms each with a ratio of 1. Minimum DC current gain is specified at 8.0.

Feature Summary

  • Integrates a single transistor with a monolithic bias network containing two resistors to eliminate external biasing components.
  • Designed for low power surface mount applications where board space is limited.
  • SC-70/SOT-323 package features modified gull-winged leads to absorb thermal stress during wave or reflow soldering.

Applications

  • Level shifting between 12V/24V circuits and logic levels
  • Open collector inverter configurations
  • Unregulated current source implementations

Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm package type and environmental compliance status. Confirm shipping format requirements such as tape and reel specifications before placing orders. Ensure the component meets all applicable RoHS directives relevant to the target market.

Selection Notes

Select this component when a compact NPN digital transistor solution is required with integrated biasing. Verify that the 50V collector-emitter rating and 100mA current capacity align with circuit demands. Check the internal resistor values to ensure proper drive characteristics for the intended load application.

Part Context

This part belongs to the MUN5211T1 Series of preferred devices from onsemi. The series includes various NPN BRTs with different internal resistor combinations housed in the same SC-70/SOT-323 package family.

Replacement Considerations

MUN5231T1G serves as the lead-free equivalent within the same series.

FAQ

What is the pin configuration for the SC-70/SOT-323 package?

Pin 1 is Base (Input), Pin 2 is Emitter (Ground), and Pin 3 is Collector (Output).

How does the BRT simplify circuit design compared to discrete transistors?

It eliminates individual external resistors by integrating them into a single device, reducing board space and component count.

MUN5231T1MUN5231T1

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