SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MUN5231T1G is a single Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates an NPN silicon transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The device features a typical input resistance of 4.7 kOhms and a typical resistor ratio of 1. It supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The component operates within a temperature range of -55°C to +150°C, dissipates up to 202 mW of power, and is housed in the SC-70-3 surface-mount package.
Verify the specific ordering suffix against official manufacturer documentation to confirm pinout configuration and packaging type. Ensure that any alternative part numbers are cross-referenced with the latest datasheet revisions to guarantee electrical compatibility and physical footprint alignment before procurement.
Select this component when a single NPN BRT with approximately 4.7 kOhm input resistance is required. Confirm that the 50 V collector-emitter voltage rating meets the circuit's maximum operating conditions. Verify that the SC-70-3 package dimensions fit the available PCB real estate constraints.
This component belongs to the MUN5231 series of dual and single Bias Resistor Transistors from onsemi. These devices are engineered to consolidate multiple discrete components into a single surface-mount package, facilitating miniaturization in modern electronic designs while maintaining standard NPN switching characteristics.
Publicly confirmed substitute part numbers include MUN5231DW1T1G for dual configurations or other single NPN BRTs with matching 4.7 kOhm input resistance and 50 V ratings. Verify pinout compatibility and thermal dissipation limits before substitution.