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The MUN5232T1G is a single NPN Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates a monolithic bias network consisting of a series base resistor and a base-emitter resistor with an NPN silicon transistor to replace discrete components. The device features a typical input resistance of 4.7 kOhms and a typical resistor ratio of 0.1. It supports a collector-emitter maximum voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The unit operates within a temperature range of -55°C to +150°C, dissipates up to 202 mW, and has a minimum DC current gain (hFE) of 80. It is housed in a compact SC-70-3 surface-mount package.
Verify the specific ordering suffix against official manufacturer documentation to confirm packaging type and compliance status. Ensure that the SC-70-3 package dimensions align with the target PCB layout constraints. Confirm RoHS and halogen-free compliance requirements match the intended application standards before finalizing procurement orders.
Select this component when a single NPN switch with integrated biasing is required to minimize board area. The 4.7 kOhm input resistance suits standard logic drive levels. Verify that the 50 V collector-emitter voltage rating exceeds the maximum circuit operating voltage. Ensure the 100 mA continuous current capability meets the load requirements of the specific application design.
This part belongs to the MUN523x series of digital transistors from onsemi. These devices are designed to replace individual transistors and their associated external resistor networks. The series offers various resistor combinations to accommodate different drive conditions while maintaining a consistent small outline package form factor for automated assembly.
Compatible substitutes include other NPN BRTs with similar 4.7 kOhm input resistance and 50 V/100 mA ratings in SC-70-3 packages, such as the MUN5233T1G or MUN5236T1G, provided the resistor ratios match the circuit design requirements.