MUN5233T1

$0.04

Description：TRANS BRT NPN 100MA 50V SOT-323
Series：-

SKU:c00b6df778a6 Category: Single, Pre-Biased Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS BRT NPN 100MA 50V SOT-323
Series：-
Mfr：onsemi
Package：Bulk
Resistors Included：R1 and R2
Transistor Type：NPN - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：4.7 kOhms
Resistor - Emitter Base (R2)：47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：-
Power - Max：310 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SC-70-3 (SOT323)

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MUN5233T1

Overview

The MUN5233T1G is an NPN Bias Resistor Transistor (BRT) from the MUN5211T1 series, integrating a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. It operates with a collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. The device features a minimum DC current gain (hFE) of 80 at IC = 5.0 mA. Internal resistors are specified as R1 = 4.7 kOhms and R2 = 47 kOhms. Total power dissipation is 202 mW at 25°C ambient temperature. It is housed in an SC-70/SOT-323 package.

Feature Summary

Integrates a single NPN transistor with a monolithic bias network to replace discrete components
Reduces board space and component count by eliminating external bias resistors
SC-70/SOT-323 package designed for low power surface mount applications

Applications

Level shifting between 12 or 24 Volt circuits and logic levels
Open collector inverter configurations for signal inversion
Unregulated current source implementations

Procurement Notes

Verify the specific ordering suffix 'G' indicates a Pb-Free package configuration when sourcing this component. Confirm that the required shipping quantity matches the standard 3000 unit tape and reel specification provided in the manufacturer documentation. Ensure compatibility with wave or reflow soldering processes suitable for the SC-70/SOT-323 package style.

Selection Notes

Select this component when a simplified circuit design requires an NPN digital transistor with a specific internal resistor ratio of approximately 0.1. The integrated bias network eliminates the need for external resistors, reducing assembly complexity. Verify that the 50 V collector-emitter voltage rating and 100 mA current capacity meet the target application requirements.

Part Context

This part belongs to the MUN5211T1 Series of NPN Silicon Bias Resistor Transistors manufactured by onsemi. The series is designed to replace single devices and their external resistor bias networks within a single surface-mount package. The specific model MUN5233T1 corresponds to a configuration with R1 = 4.7 kOhms and R2 = 47 kOhms.