MUN5235T1

Overview

The onsemi MUN5235T1 is an NPN Bias Resistor Transistor (BRT) housed in a SC-70/SOT-323 package. It integrates a single transistor with a monolithic bias network consisting of a series base resistor (R1 = 2.2 kΩ) and a base-emitter resistor (R2 = 47 kΩ). The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 50 Vdc. Total device dissipation is rated at 202 mW at 25°C ambient temperature, derating linearly above this threshold. The junction and storage temperature range spans from -55°C to +150°C.

Feature Summary

• Integrates a single NPN transistor with a monolithic bias resistor network to replace discrete components
• Reduces board space and component count by eliminating external bias resistors
• SC-70/SOT-323 package designed for low power surface mount applications
• Modified gull-winged leads absorb thermal stress during wave or reflow soldering

Applications

• Level shifting between 12V/24V circuits and logic levels
• Open collector inverter configurations
• Unregulated current source implementations

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and environmental compliance status. Confirm that the requested part number matches the exact electrical characteristics required for the target application circuit design.

Selection Notes

Select this component when a compact NPN switching solution with integrated biasing is required. Ensure the 2.2 kΩ input resistance aligns with the driving source impedance and that the 50V voltage rating exceeds the maximum operating voltage in the intended circuit environment.

Part Context

This component belongs to the MUN5211T1 Series of preferred devices manufactured by onsemi. These digital transistors are specifically engineered to simplify circuit design by combining active and passive elements into a single surface-mount package.

Replacement Considerations

MUN5235T1G serves as the lead-free equivalent within the same series.