MUN5235T1G

Overview

The MUN5235T1G is a single NPN Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates a transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor within an SC-70-3 package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation of 202 mW. The typical input resistance is 4.7 kOhms with a resistor ratio of 0.1. The device operates between -55°C and +150°C, features a minimum DC current gain (hFE) of 80, and complies with RoHS standards.

Feature Summary

• Integrates a single NPN transistor with a monolithic bias network to replace discrete components
• Reduces printed circuit board space and component count in digital switching applications
• Simplifies circuit design by eliminating external bias resistors

Applications

• Digital switching circuits requiring simplified biasing
• Low-power surface mount applications where board space is limited
• General-purpose logic interface and level shifting

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure that the selected variant matches the required thermal and electrical ratings for the target application environment. Cross-reference the part number with authorized distributors to confirm availability and compliance status.

Selection Notes

Select this component when a single NPN BRT with approximately 4.7 kOhm base resistance is required. Compare the 4.7 kOhm input resistance against other variants in the MUN5235 series, such as those with 2.2 kOhm or higher resistance values, to match the specific drive requirements of the control signal source.

Part Context

This component belongs to the MUN5235 series of Bias Resistor Transistors from onsemi. These devices are designed to simplify the design of bipolar junction transistor circuits by integrating biasing resistors directly onto the silicon die alongside the transistor element.

Replacement Considerations

Compatible substitutes include other single NPN BRTs with similar 50V/100mA ratings and comparable base resistance values, provided they fit within the SC-70-3 footprint.