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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SC70-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Bulk
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：100 kOhms
- Resistor - Emitter Base (R2)：100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：202 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70-3 (SOT323)
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Overview
The MUN5236T1G is a single NPN digital transistor manufactured by onsemi, housed in an SC-70-3 surface-mount package. It features a built-in bias resistor network with a typical input resistance of 100 kOhms and a resistor ratio of 1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 80 and a power dissipation rating of 202 mW. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Integrates a single NPN transistor with a built-in bias resistor network for simplified circuit design.
- Provides high DC current gain with a minimum hFE of 80 for reliable switching performance.
- Designed for surface-mount installation in compact SC-70-3 packages.
Applications
- General-purpose switching applications in consumer electronics.
- Driver circuits for low-current loads in portable devices.
- Logic level translation and interface buffering in digital systems.
Procurement Notes
Verify the specific ordering suffix against official onsemi documentation to confirm package type and tape/reel specifications. Ensure compliance with RoHS directives as indicated in the manufacturer's environmental reports. Cross-reference the Mouser part number 863-MUN5236T1G for accurate sourcing details from authorized distributors.
Selection Notes
Select this component when a single NPN digital transistor with a 100 kOhm base resistor is required. Compare with the MUN5237T1G if a lower input resistance of 47 kOhms is needed, or the MUN5233T1G for 4.7 kOhms. Ensure the SC-70-3 package footprint matches the PCB layout constraints and that the 50V voltage rating suits the application's operating conditions.
Part Context
This component belongs to the MUN5236 series of pre-biased transistors from onsemi. It shares the same internal resistor configuration as the NSVMUN2236T1G but utilizes a different SC-70-3 package compared to the SOT-23-3 used in the NSVM variant. It serves as a direct replacement for legacy parts like the MUN2236T1G, which is now obsolete.
Replacement Considerations
The NSVMUN2236T1G offers identical electrical characteristics but uses an SOT-23-3 package. Verify pinout compatibility and thermal dissipation differences, as the NSVM variant supports higher power dissipation (400 mW vs. 202 mW).
FAQ
What is the typical value of the built-in base resistor?
The typical input resistance is 100 kOhms.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is 50 V.
Does this component contain multiple transistors?
No, it is configured as a single transistor unit.
