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The onsemi MUN5237T1 is a single NPN Bias Resistor Transistor (BRT) housed in an SC-70/SOT-323 package. It integrates a monolithic bias network consisting of a series base resistor and a base-emitter resistor to replace discrete components. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 Vdc, a continuous collector current (IC) of 100 mAdc, and a total device power dissipation (PD) of 202 mW at 25°C. The typical input resistance (R1) is 47 kOhms with a resistor ratio (R1/R2) of 2.1. The DC current gain (hFE) has a minimum value of 80.
Verify the specific ordering suffix against official documentation to confirm package type and environmental compliance. Confirm that the requested part number matches the exact resistor values and configuration required for the design. Ensure compatibility with standard SMD assembly processes for the SC-70/SOT-323 footprint.
Select this component when a compact NPN digital transistor solution is needed to simplify circuit design. Verify that the 47 kOhm series base resistor and 2.1 ratio meet the specific drive requirements. Ensure the 50 V collector-emitter rating and 100 mA current capacity are sufficient for the target application load.
This device belongs to the MUN5211T1 Series of preferred devices from onsemi. These BRTs are designed to replace a single device and its external resistor bias network by integrating them into a single surface-mount package. The series offers various resistor combinations to suit different logic interface needs.
MUN5237T1G serves as the lead-free equivalent within the same series.