MUN5237T1G

MUN5237T1G

$0.14
  • Description:TRANS PREBIAS NPN 50V SC70-3
  • Series:-

SKU:aca4322aca51 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SC70-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:202 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70-3 (SOT323)

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MUN5237T1G

Overview

The MUN5237T1G is a single NPN Bias Resistor Transistor (BRT) from onsemi, packaged in SC-70/SOT-323. It integrates a transistor with a monolithic bias network consisting of a series base resistor (R1 = 47 kΩ) and a base-emitter resistor (R2 = 22 kΩ), yielding a typical resistor ratio of 2.1. The device supports a continuous collector current of 100 mA and withstands collector-emitter voltages up to 50 V. Electrical characteristics include a minimum DC current gain (hFE) of 80 at 5 mA and 10 V, and a maximum collector-emitter saturation voltage of 0.25 V at 10 mA. Thermal dissipation is rated at 202 mW at 25°C, with an operating temperature range spanning -55°C to +150°C.

Feature Summary

  • Integrates a single NPN transistor with a monolithic bias resistor network to replace discrete components.
  • Reduces printed circuit board space and component count by combining the transistor and resistors into one package.
  • Designed for simplified circuit design through built-in biasing capabilities.

Applications

  • Replacing discrete transistor and external resistor bias networks in digital logic circuits.
  • Switching applications requiring integrated base drive resistance.
  • General-purpose signal switching in consumer electronics and industrial control systems.

Procurement Notes

Verify the specific ordering suffix and marking code against the manufacturer's official documentation to ensure correct package type and revision. Confirm that the component meets required environmental standards such as RoHS compliance if applicable to the target assembly process. Cross-reference the part number with the latest distributor catalogs to validate availability and lead times before finalizing procurement plans.

Selection Notes

Select this component when a compact solution is needed for driving NPN loads with integrated base biasing. Ensure the application voltage does not exceed the 50 V collector-emitter rating and that the load current remains within the 100 mA continuous limit. Consider the thermal derating curves if the ambient temperature exceeds 25°C or if high duty cycles are expected in the operational environment.

Part Context

This device belongs to the MUN5237 series of digital transistors manufactured by onsemi. It shares electrical specifications with other packages in the same family, such as the SC-59 and SOT-23 variants, but differs in physical dimensions and thermal characteristics due to the SC-70/SOT-323 packaging. The series is designed to streamline the design of bias networks for small-signal switching applications.

Replacement Considerations

Direct replacements include other MUN5237 variants in different packages, such as MUN5237DW1T1G for dual configurations or MMUN5237LT1G for SOT-23 packaging. Verify pinout compatibility and thermal performance when substituting across different case styles to ensure adequate heat dissipation.

MUN5237T1GMUN5237T1G
$0.14
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