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The MUN5238T1G is a single NPN digital transistor (BRT) manufactured by onsemi, housed in an SC-70-3 surface-mount package. It integrates a built-in bias resistor network with a typical input resistance of 47 kOhms and a resistor ratio of 2.1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical specifications include a minimum DC current gain (hFE) of 80 and a power dissipation rating of 202 mW. It operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official manufacturer documentation to confirm pinout compatibility and environmental compliance status. Ensure that the component source is traced directly to authorized distribution channels to mitigate risks associated with counterfeit devices. Cross-reference the part number with the latest datasheet revisions to validate performance parameters prior to integration into production designs.
Select this component when a single NPN switch with integrated base biasing is required in space-constrained designs. The 47 kOhm input resistance offers a balance between drive current requirements and noise immunity. Compare the 202 mW power dissipation limit against thermal constraints in the target application environment to ensure reliable operation under maximum load conditions.
This component belongs to the MUN523x series of pre-biased transistors from onsemi. These devices are designed to replace multiple discrete components, reducing board space and assembly costs. The MUN5238T1G specifically utilizes the SC-70-3 footprint, which is standard for small-signal applications requiring minimal PCB area while maintaining robust electrical performance characteristics.
Potential substitutes include other NPN BRTs with similar 50V ratings and 47 kOhm input resistances, such as the MUN5236T1G or MUN5237T1G, provided the resistor ratios align with design requirements. Verify package compatibility and electrical limits before substitution.