MUR10010CT

$53.24

Description：DIODE MODULE GP 100V 50A 2TOWER
Series：-

SKU:3cb7ff4d8436 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIODE MODULE GP 100V 50A 2TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：100 V
Current - Average Rectified (Io) (per Diode)：50A
Voltage - Forward (Vf) (Max) @ If：1.3 V @ 50 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：75 ns
Current - Reverse Leakage @ Vr：25 µA @ 50 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Twin Tower
Supplier Device Package：Twin Tower
Grade：-
Qualification：-

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MUR10010CT

Overview

The MUR10010CT is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a Twin Tower package with screw mount installation. The device supports a repetitive peak reverse voltage of 100 V and an average forward current of 100 A per package. Key electrical parameters include a maximum instantaneous forward voltage of 1.0 V, a maximum reverse recovery time of 75 ns, and a thermal resistance junction-to-case of 1.0 °C/W per leg. It operates within a temperature range of -55 °C to +150 °C.

Feature Summary

High surge capability with a peak forward surge current rating of 1500 A per leg
Electrically isolated base plate design for efficient heat dissipation
Not ESD sensitive for improved handling safety

Applications

High frequency switching power supplies
Free wheeling rectification in DC-DC converters
Inverter circuits requiring fast recovery characteristics

Procurement Notes

Verify the specific datasheet revision date against the manufacturing batch to ensure compliance with current specifications. Confirm that the Twin Tower package dimensions match the intended PCB footprint or heatsink interface. Check for any regional shipping restrictions or export documentation requirements before finalizing orders.

Selection Notes

Select this component when applications require high current handling combined with fast reverse recovery times. Ensure the operating junction temperature remains within the specified -55 °C to +150 °C range. Verify that the system's thermal management can maintain the case temperature below 140 °C to sustain the rated 100 A current.

Part Context

This part belongs to the MUR100 series of silicon super fast recovery diodes from GeneSiC Semiconductor. The series offers various voltage ratings from 50 V to 200 V while maintaining consistent current and package characteristics. It serves as a robust solution for high-power industrial and commercial electronics.