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The GeneSiC Semiconductor MUR10020CTR is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 200 V and an average forward current of 100 A per package. It features a twin tower screw mount package with a maximum instantaneous forward voltage of 1.0 V and a maximum reverse recovery time of 75 ns. The device operates within a junction temperature range of -55 °C to +150 °C, offering high surge capability.
Verify the specific part number against official manufacturer documentation to confirm availability status and exact electrical specifications. Ensure that the required thermal management solutions are compatible with the twin tower mounting style and the specified thermal resistance values. Confirm compliance with relevant environmental standards before finalizing procurement decisions.
Select this component when a robust super fast recovery diode is needed for high-current applications requiring low reverse recovery times. The twin tower package facilitates efficient heat dissipation and secure mechanical mounting. Consider the 200 V rating and 100 A current capacity to ensure adequate margins for the intended circuit operation.
This module belongs to the MUR100 series of silicon super fast recovery diodes from GeneSiC Semiconductor. The series offers various voltage ratings from 50 V to 200 V while maintaining consistent current handling capabilities. The 'CTR' suffix typically indicates reversed leads compared to standard configurations.
MUR10020CT