MUR10040CT

MUR10040CT

$53.24
  • Description:DIODE MODULE GP 400V 50A 2TOWER
  • Series:-

SKU:046a87c103da Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE GP 400V 50A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):400 V
  • Current - Average Rectified (Io) (per Diode):50A
  • Voltage - Forward (Vf) (Max) @ If:1.3 V @ 50 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):90 ns
  • Current - Reverse Leakage @ Vr:25 µA @ 50 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

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MUR10040CT

Overview

The MUR10040CT is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a twin tower package configuration with one pair of common cathode standard diodes. The device supports a repetitive peak reverse voltage (VRRM) of 400 V and an average forward current (IF(AV)) of 100 A per package. Key electrical characteristics include a maximum instantaneous forward voltage of 1.3 V at 50 A, a peak forward surge current of 1500 A, and a maximum reverse recovery time of 90 ns. The junction operating temperature range extends from -55°C to 150°C.

Feature Summary

  • High surge current capability for robust performance under transient conditions
  • Twin tower package design facilitating efficient base mounting and thermal management
  • Super fast recovery characteristics enabling high efficiency in switching applications

Applications

  • High frequency DC-DC converters
  • Free wheeling rectification in motor drives
  • Isolated power supply output rectification

Procurement Notes

Verify the specific suffix designation when ordering, as the datasheet indicates that devices marked with an 'R' have reversed leads compared to the standard configuration. Confirm the terminal orientation matches the circuit board layout before installation to prevent incorrect polarity connection. Ensure the procurement documentation explicitly states the lead configuration to avoid assembly errors during production.

Selection Notes

Select this component for applications requiring high current handling with fast switching speeds. The 400 V rating suits low-voltage high-current systems. Evaluate the thermal resistance of 1.0 °C/W per leg against the system's heat sink capabilities. Consider the 1500 A surge rating for inrush protection requirements. Compare the 90 ns recovery time against system switching frequencies to minimize reverse recovery losses.

Part Context

This part belongs to the MUR100 series of silicon super fast recovery diodes produced by GeneSiC Semiconductor. The series includes variants with different voltage ratings, such as the MUR10060CT rated for 600 V. These modules are designed for industrial power conversion where reliability and thermal performance are critical. The twin tower form factor distinguishes them from smaller through-hole or surface-mount rectifiers.

Replacement Considerations

Direct substitutes include other manufacturers' MUR10040CT equivalents offering identical 400 V/100 A specifications. Verify pinout compatibility, particularly regarding the 'R' suffix lead reversal if replacing a variant. Ensure replacement parts meet the same 90 ns max reverse recovery time and 1.0 °C/W thermal resistance requirements.

MUR10040CTMUR10040CT
$53.24
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