MUR10060CT

Overview

The MUR10060CT is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a twin tower package configuration with one pair of common cathode standard diodes. The device supports a maximum repetitive peak reverse voltage of 600 V and an average forward current of 100 A per leg. Key electrical characteristics include a maximum instantaneous forward voltage of 1.7 V at 50 A and a maximum reverse recovery time of 110 ns. The module operates within a junction temperature range of -55°C to 150°C.

Feature Summary

• High surge capability designed for robust power handling
• Twin tower package structure for efficient mounting
• Super fast recovery silicon technology for rapid switching
• Electrically isolated base plate construction

Applications

• High frequency switch mode power supplies
• Inverter circuits in motor drives
• Free wheeling rectification in DC-DC converters
• Protection diodes in high speed switching applications

Procurement Notes

Verify the specific suffix designation against official documentation, as variations may indicate reversed lead configurations or specific thermal resistance ratings. Confirm that the requested component matches the exact voltage and current specifications required for the target circuit design before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high current capacity and fast switching speeds. Ensure the thermal management system can handle the junction-to-case thermal resistance. Verify that the peak reverse voltage rating exceeds the maximum circuit voltage spikes to prevent breakdown during operation.

Part Context

This part belongs to the MUR100 series of silicon super fast recovery diodes from GeneSiC Semiconductor. The series offers various voltage ratings ranging from 400 V to 600 V while maintaining a consistent 100 A average forward current rating across the lineup.

Replacement Considerations

Direct substitutes within the same series include the MUR10040CT for lower voltage requirements. Cross-brand replacements must match the 100 A current rating, 600 V blocking voltage, and twin tower package dimensions to ensure mechanical and electrical compatibility.

FAQ

What is the maximum reverse recovery time for the MUR10060CT?

The maximum reverse recovery time is 110 ns.

Is the MUR10060CT sensitive to electrostatic discharge?

No, the device is not ESD sensitive.

What is the thermal resistance from junction to case?

The maximum thermal resistance from junction to case is 1.0 °C/W per leg.