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The MUR1610CT is a silicon ultra-fast recovery rectifier diode manufactured by Harris Corporation. It features a common cathode configuration with two internal elements housed in a TO-251 (R-PSFM-T3) package. The device supports an average forward current of 15 A and a maximum repetitive peak reverse voltage of 400 V. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 200 A, a maximum forward voltage of 1.25 V, and an operating temperature range from -55 °C to 175 °C.
Verify the manufacturer origin carefully, as Harris Corporation's semiconductor assets were acquired by ON Semiconductor. Ensure the specific ordering suffix matches the required package type and lead finish. Confirm RoHS compliance status, as datasheets may indicate non-compliance for older production runs. Cross-reference the part number against current distributor catalogs to ensure availability and authenticity.
Select this component when a common cathode arrangement is required for synchronous rectification or bridge configurations without using discrete pairs. The 15 A current rating and 400 V blocking voltage suit medium-power industrial applications. Consider the thermal performance of the TO-251 package and the 175 °C junction temperature limit for high-temperature environments.
This part belongs to the MUR series of ultra-fast recovery rectifiers produced by Harris Semiconductor. The series includes various voltage and current ratings, such as the MUR810 and MUR1510. These devices are designed to replace standard recovery diodes in applications where reverse recovery time impacts efficiency and electromagnetic interference.