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Product Detailed Parameters
- Description：DIODE MODULE GP 50V 100A 2TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：50 V
- Current - Average Rectified (Io) (per Diode)：100A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 100 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：75 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Twin Tower
- Supplier Device Package：Twin Tower
- Grade：-
- Qualification：-
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Overview
The MUR20005CT is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a Twin Tower package with an average forward current rating of 200 A per package and a repetitive peak reverse voltage (VRRM) of 50 V. The device supports a maximum thermal resistance from junction to case of 0.45 °C/W per leg. Electrical characteristics include a maximum instantaneous forward voltage of 1.0 V, a peak forward surge current of 2000 A, and a maximum reverse recovery time of 75 ns. Operating and storage temperatures range from -55 °C to +150 °C.
Feature Summary
- High surge capability for robust performance under transient conditions
- Twin Tower package design for efficient mounting and heat dissipation
- Super fast recovery silicon technology for rapid switching applications
Applications
- Industrial power supplies
- Inverter circuits
- Free-wheeling rectification in motor drives
Procurement Notes
Verify the specific voltage variant required, as the MUR200 series includes options ranging from 50 V to 200 V VRRM. Confirm whether the 'R' suffix is needed for reversed leads. Ensure the procurement documentation matches the exact part number to avoid confusion with other current ratings within the same family. Cross-reference datasheet revisions for any updates to thermal or electrical limits.
Selection Notes
Select this component when a 200 A average forward current and 50 V blocking voltage are required in a screw-mountable module. Evaluate the 0.45 °C/W thermal resistance against your heatsinking capabilities. Consider the 75 ns reverse recovery time for high-frequency switching requirements. Compare against higher voltage variants if system transients exceed 50 V.
Part Context
This module belongs to the MUR200 series of silicon super fast recovery diodes. The series offers various voltage ratings from 50 V to 200 V while maintaining a consistent 200 A current capacity. The Twin Tower package allows for direct board mounting or chassis installation via screw terminals, providing a compact solution for high-power density designs.
Replacement Considerations
Direct substitutes within the same series include MUR20010CT (100 V) and MUR20020CT (200 V), provided the lower voltage rating is acceptable for the circuit. Verify that the replacement maintains the same Twin Tower package dimensions and terminal configuration to ensure mechanical compatibility.
