MUR20005CTR

MUR20005CTR

$57.01
  • Description:DIODE MODULE GP 50V 100A 2TOWER
  • Series:-

SKU:1b7676bab4a8 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE GP 50V 100A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io) (per Diode):100A
  • Voltage - Forward (Vf) (Max) @ If:1.3 V @ 100 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):75 ns
  • Current - Reverse Leakage @ Vr:25 µA @ 50 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

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MUR20005CTR

Overview

The GeneSiC Semiconductor MUR20005CTR is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 50 V and an average forward current of 200 A per package. It features a twin tower screw-mount package with a maximum thermal resistance of 0.45 °C/W per leg. The device supports an operating temperature range from -55 °C to +150 °C and offers a peak forward surge current capability of 2000 A. The 'R' suffix indicates reversed leads compared to the standard CT version.

Feature Summary

  • High surge current capability designed for demanding power applications
  • Twin tower package configuration enabling efficient screw mounting
  • Super fast recovery characteristics suitable for high-frequency switching

Applications

  • Industrial motor drives and inverters
  • Uninterruptible power supply (UPS) systems
  • DC-DC converters and chopper circuits

Procurement Notes

Verify the specific lead configuration required for your design, as the CTR suffix denotes reversed leads compared to the standard CT variant. Confirm that the 50 V rating aligns with your circuit's peak reverse voltage requirements. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance for reliable operation within the stated temperature limits.

Selection Notes

Select this component when a 200 A average forward current rating and 50 V blocking voltage are required in a twin tower form factor. Consider the reversed lead configuration if it facilitates easier PCB routing or heatsink integration. Evaluate the 75 ns reverse recovery time against your switching frequency needs to ensure minimal switching losses and electromagnetic interference.

Part Context

This module belongs to the MUR200 series of silicon super fast recovery diodes, which includes variants with different voltage ratings up to 200 V. All models in this series share the same 200 A current rating and twin tower packaging style, differing primarily in their peak reverse voltage specifications and corresponding thermal performance characteristics.

Replacement Considerations

Direct pin-compatible replacements include other MUR200 series modules such as the MUR20010CT or MUR20020CT, provided the higher voltage ratings do not compromise system reliability. Verify that any substitute maintains the same twin tower package dimensions and thermal resistance values to ensure mechanical and thermal compatibility.

MUR20005CTRMUR20005CTR
$57.01
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