MUR20010CTR

$72.05

Description：DIODE MODULE GP 100V 100A 2TOWER
Series：-

SKU:1ffa901b4000 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIODE MODULE GP 100V 100A 2TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Anode
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：100 V
Current - Average Rectified (Io) (per Diode)：100A
Voltage - Forward (Vf) (Max) @ If：1.3 V @ 100 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：75 ns
Current - Reverse Leakage @ Vr：25 µA @ 50 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Twin Tower
Supplier Device Package：Twin Tower
Grade：-
Qualification：-

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MUR20010CTR

Overview

The GeneSiC Semiconductor MUR20010CTR is a silicon super fast recovery diode module featuring a Twin Tower package. It provides a repetitive peak reverse voltage of 100 V and an average forward current of 200 A per package. The device supports a peak forward surge current of 2000 A per leg with a maximum instantaneous forward voltage of 1.0 V. Thermal resistance from junction to case is 0.45 °C/W per leg, and the maximum reverse recovery time is 75 ns. Operating and storage temperatures range from -55 °C to 150 °C.

Feature Summary

High surge capability for robust performance under transient conditions
Twin Tower package design for efficient thermal management
Super fast recovery characteristics suitable for high-frequency applications

Applications

High frequency inverters
Free wheeling circuits
Polarity protection systems

Procurement Notes

Verify the specific datasheet version and manufacturer documentation to confirm electrical parameters and mechanical dimensions. Ensure compatibility with mounting hardware requirements for the Twin Tower package. Check for any regional distribution restrictions or discontinuation notices prior to finalizing procurement plans.

Selection Notes

Select this component for applications requiring high current handling and fast switching speeds. Consider the 100 V reverse voltage rating and 200 A forward current capacity against circuit demands. Evaluate thermal management solutions based on the specified junction-to-case thermal resistance to ensure reliable operation within the temperature limits.

Part Context

This module belongs to the MUR200 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series includes variants with different reverse voltage ratings, such as 50 V and 200 V options. These modules are designed for power electronics applications requiring high efficiency and reliability in demanding environments.