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Product Detailed Parameters
- Description：DIODE MODULE GP 200V 100A 2TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：200 V
- Current - Average Rectified (Io) (per Diode)：100A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 100 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：75 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Twin Tower
- Supplier Device Package：Twin Tower
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor MUR20020CT is a silicon super fast recovery diode module featuring a twin tower package configuration. It provides a repetitive peak reverse voltage of 200 V and an average forward current rating of 200 A per package. The device exhibits a maximum instantaneous forward voltage of 1.0 V and a peak forward surge current capability of 2000 A per leg. Electrical characteristics include a maximum reverse recovery time of 75 ns and a maximum thermal resistance from junction to case of 0.45 °C/W per leg.
Feature Summary
- High surge current capability for robust operation under transient conditions
- Twin tower package design facilitating efficient mounting and heat dissipation
- Super fast recovery characteristics suitable for high-frequency switching applications
Applications
- High frequency inverters
- Free wheeling circuits
- Polarity protection systems
Procurement Notes
Verify the specific part number suffix against official documentation, as variations may indicate different lead configurations or packaging options. Confirm that the component meets all required electrical specifications for the intended application environment. Ensure compliance with relevant safety and environmental standards before integration into final products.
Selection Notes
Select this component based on its 200 V reverse voltage rating and 200 A average forward current capacity. Consider the 75 ns reverse recovery time for high-speed switching requirements. Evaluate the thermal management needs relative to the 0.45 °C/W junction-to-case thermal resistance to ensure reliable operation within the specified temperature range.
Part Context
This component belongs to the MUR200 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series offers various voltage ratings ranging from 50 V to 200 V while maintaining consistent current handling capabilities. These modules are designed for power electronics applications requiring fast switching speeds and high reliability.
Replacement Considerations
Compatible substitutes within the same series include MUR20005CT and MUR20010CT, which share identical package dimensions and thermal characteristics but differ in reverse voltage ratings.
