MUR20060CTR

$72.05

Description：DIODE MODULE GP 600V 100A 2TOWER
Series：-

SKU:b76b4fa28285 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIODE MODULE GP 600V 100A 2TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Anode
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：600 V
Current - Average Rectified (Io) (per Diode)：100A
Voltage - Forward (Vf) (Max) @ If：1.7 V @ 50 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：110 ns
Current - Reverse Leakage @ Vr：25 µA @ 50 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Twin Tower
Supplier Device Package：Twin Tower
Grade：-
Qualification：-

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MUR20060CTR

Overview

The GeneSiC Semiconductor MUR20060CTR is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 600 V and an average forward current of 200 A per package. It features a Twin Tower package with screw mount installation. The device supports a peak forward surge current of 2000 A per leg and operates within a junction temperature range of -55 to 150 °C. Electrical characteristics include a maximum instantaneous forward voltage of 1.7 V and a maximum reverse recovery time of 110 ns.

Feature Summary

High surge capability designed for demanding power applications
Twin Tower package configuration for efficient thermal management
Not ESD sensitive, simplifying handling procedures

Applications

High frequency switching circuits
Free-wheeling rectification in power converters
Inductive load switching protection

Procurement Notes

Verify the specific part number against official manufacturer documentation to confirm electrical ratings and pinout compatibility. Ensure that the procurement channel provides valid traceability and authenticity guarantees for semiconductor components. Confirm that the component meets all necessary environmental and safety standards required for the intended application before finalizing orders.

Selection Notes

Select this component based on its 600 V reverse voltage rating and 200 A continuous current capacity. Consider the 110 ns reverse recovery time for high-frequency operation requirements. Evaluate the thermal resistance and mounting constraints associated with the Twin Tower package to ensure adequate heat dissipation in the target system design.

Part Context

This module belongs to the MUR200 series of silicon super fast recovery diodes from GeneSiC Semiconductor. The series offers various voltage ratings ranging from 400 V to 600 V while maintaining consistent current handling capabilities. These modules are engineered to replace standard recovery diodes in applications requiring faster switching speeds and improved efficiency.