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The MUR2X030A02 is a silicon super fast recovery rectifier module manufactured by GeneSiC Semiconductor. It features a dual parallel configuration within an electrically isolated SOT-227 package. The device supports a maximum repetitive peak reverse voltage of 200 V and provides an average forward current of 60 A per package. Key electrical characteristics include a maximum instantaneous forward voltage of 1.0 V, a peak forward surge current of 400 A per leg, and a maximum reverse recovery time of 60 ns. The module operates within a junction temperature range of -55 °C to 175 °C.
Verify the specific manufacturer source when sourcing this component, as distribution channels may vary. Confirm that the received unit matches the SOT-227 package style and terminal configuration shown in official documentation. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under actual operating conditions.
Select this module for applications requiring high current handling with fast switching speeds. The 200 V rating suits low voltage DC systems. Verify that the required surge current does not exceed 400 A per leg. Consider the 175 °C maximum junction temperature for high ambient environments. Ensure the circuit design accommodates the 60 ns reverse recovery time to minimize switching losses.
This component belongs to the MUR2X series of super fast recovery rectifier modules from GeneSiC Semiconductor. These modules are designed for robust performance in power conversion applications. The SOT-227 package provides a compact form factor with integrated isolation capabilities, distinguishing it from standard non-isolated discrete diodes.
Public confirmed substitute part numbers are not available in the provided documentation.