MUR2X060A12

$33.30

Description：DIODE MODULE GP 1200V 60A SOT227
Series：-

SKU:449c9a0840a5 Category: Diode Arrays Brand: GeneSiC Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：DIODE MODULE GP 1200V 60A SOT227
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：2 Independent
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io) (per Diode)：60A
Voltage - Forward (Vf) (Max) @ If：2.35 V @ 60 A
Speed：Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：25 µA @ 1200 V
Operating Temperature - Junction：-55°C ~ 175°C
Mounting Type：Chassis Mount
Package / Case：SOT-227-4, miniBLOC
Supplier Device Package：SOT-227
Grade：-
Qualification：-

Download product information

MUR2X060A12

Overview

The MUR2X060A12 is a super fast recovery rectifier module manufactured by GeneSiC Semiconductor. It features an average forward current of 120 A and a maximum recurrent peak reverse voltage of 1200 V. The device utilizes an electrically isolated SOT-227 package with a base plate isolation voltage of 2500 V. Key electrical parameters include a maximum instantaneous forward voltage of 2.35 V, a peak forward surge current of 900 A, and a maximum reverse recovery time of 90 ns. The junction-to-case thermal resistance is 0.8 °C/W. Operating temperatures range from -55 °C to +175 °C.

Feature Summary

High surge capability for handling transient current loads
Electrically isolated base plate for enhanced safety
Super fast recovery characteristics for efficient switching

Applications

High frequency power supply circuits
Induction heating systems
Uninterruptible power supplies (UPS)
DC-DC converter modules

Procurement Notes

Verify the manufacturer origin as GeneSiC Semiconductor or its successor Navitas Semiconductor due to corporate acquisition history. Confirm the specific datasheet version matches the provided technical parameters, particularly the 1200 V rating and 120 A current capacity. Ensure the SOT-227 package dimensions align with your mechanical design requirements before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high voltage blocking capabilities combined with moderate current ratings. The 1200 V reverse voltage rating suits high-voltage DC link applications. Consider the 0.8 °C/W thermal resistance for heat sink sizing calculations. The electrically isolated base plate simplifies mounting on grounded heatsinks without additional insulators.

Part Context

This part belongs to the MUR2X series of super fast recovery rectifier modules. The series is designed for high-performance power conversion applications where low reverse recovery charge and fast switching speeds are critical. The MUR2X060A12 specifically targets the 1200 V / 120 A segment within the broader portfolio of silicon diode modules offered by the manufacturer.