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The MUR2X100A10 is a super fast recovery rectifier module manufactured by GeneSiC Semiconductor. It features an average forward current of 200 A and a maximum repetitive peak reverse voltage of 1000 V. The device utilizes an SOT-227 isolation type package with an electrically isolated base plate. Key electrical parameters include a maximum instantaneous forward voltage of 2.35 V per leg, a peak forward surge current of 1600 A, and a maximum reverse recovery time of 125 ns. The operating temperature range spans from -55 °C to +175 °C.
Verify the manufacturer origin carefully, as GeneSiC Semiconductor has undergone corporate restructuring and acquisition. Confirm that the specific batch matches the required thermal resistance and isolation voltage specifications. Ensure the SOT-227 package dimensions align with your heatsink interface requirements before finalizing procurement orders.
Select this component when high voltage blocking capability combined with high current capacity is required in a single module. The SOT-227 package provides a compact solution for applications needing electrical isolation. Consider the 125 ns reverse recovery time for switching frequency limitations compared to Schottky alternatives.
This part belongs to the MUR2X series of silicon super fast recovery rectifiers designed for high-power industrial applications. The series offers various voltage ratings while maintaining consistent current handling capabilities within the SOT-227 form factor.
MUR2X100A12