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Product Detailed Parameters
- Description：DIODE MODULE GP 50V 150A 2TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：50 V
- Current - Average Rectified (Io) (per Diode)：150A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 100 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：90 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Twin Tower
- Supplier Device Package：Twin Tower
- Grade：-
- Qualification：-
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Overview
The MUR30005CT is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 50 V and an average forward current of 300 A per package. It features a twin tower package with screw mount installation. Key electrical parameters include a maximum instantaneous forward voltage of 1.0 V, a peak forward surge current of 2750 A, and a maximum reverse recovery time of 100 ns. The junction-to-case thermal resistance is 0.40 °C/W. Operating and storage temperatures range from -55 °C to +150 °C.
Feature Summary
- High surge capability designed for demanding power applications
- Twin tower package configuration for efficient mounting
- Super fast recovery characteristics suitable for high-frequency switching
Applications
- High frequency rectification in power supplies
- Free-wheeling diodes in motor drives
- DC-DC converter circuits
Procurement Notes
Verify the specific part number suffix against official documentation to confirm terminal configuration details. Ensure that the procurement specifications align with the required voltage and current ratings for the intended application environment. Cross-reference datasheet revisions to confirm compliance with current manufacturing standards before finalizing orders.
Selection Notes
Select this component based on its 50 V rating and 300 A current capacity requirements. Evaluate the 100 ns reverse recovery time against circuit switching speeds. Consider the 0.40 °C/W thermal resistance for heatsinking design. Confirm the twin tower package dimensions fit the mechanical constraints of the assembly.
Part Context
This device belongs to the MUR300 series of silicon super fast recovery diode modules. The series offers various voltage ratings ranging from 50 V to 200 V while maintaining consistent current handling capabilities. These modules are engineered for robust performance in industrial power conversion systems requiring high reliability and fast switching speeds.
Replacement Considerations
MUR30010CT
FAQ
What is the maximum reverse recovery time for the MUR30005CT?
The maximum reverse recovery time (Trr) is 100 ns.
Does the MUR30005CT require ESD precautions during handling?
No, the device is not ESD sensitive.
What is the peak forward surge current rating?
The peak forward surge current (IFSM) is 2750 A for a duration of 8.3 ms half sine wave.
