MUR30005CTR

Overview

The GeneSiC Semiconductor MUR30005CTR is a silicon super fast recovery diode module rated for repetitive peak reverse voltages from 50 V to 200 V. It supports an average forward current of 300 A per package and delivers a peak forward surge current of 2750 A per leg. The device features a maximum instantaneous forward voltage of 1.0 V and a maximum reverse recovery time of 100 ns. Thermal resistance from junction to case is 0.40 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.

Feature Summary

• High surge capability with Twin Tower package design
• Super fast recovery characteristics for efficient switching
• Not ESD sensitive for robust handling

Applications

• High frequency power conversion circuits
• Industrial motor drive rectification
• DC-DC converter freewheeling applications

Procurement Notes

Verify the specific voltage rating variant required, as the series spans 50 V to 200 V. Confirm lead orientation, as the 'R' suffix indicates reversed leads compared to standard configurations. Ensure thermal management aligns with the specified junction-to-case thermal resistance limits during operation.

Selection Notes

Select this component when high average current capacity and fast recovery times are critical. The Twin Tower package facilitates screw mounting for effective heat dissipation. Consider the specific reverse voltage requirement within the 50 V to 200 V range to ensure adequate safety margins in the target circuit design.

Part Context

This module belongs to the MUR300 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series includes variants with different voltage ratings but shares common current and thermal specifications. The Twin Tower package provides a standardized form factor for industrial power electronics assemblies.

Replacement Considerations

MUR30010CTR, MUR30020CTR