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Product Detailed Parameters
- Description：DIODE MODULE GP 100V 150A 2TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：150A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 100 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：90 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Twin Tower
- Supplier Device Package：Twin Tower
- Grade：-
- Qualification：-
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Overview
The MUR30010CT is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a twin tower package configuration with one pair of common cathode standard diodes. The device supports a repetitive peak reverse voltage (VRRM) of 100 V and an average forward current (IF(AV)) of 300 A per package. Key electrical characteristics include a maximum instantaneous forward voltage of 1.0 V, a maximum reverse recovery time of 100 ns, and a thermal resistance from junction to case of 0.40 °C/W per leg. The operating temperature range extends from -55°C to +150°C.
Feature Summary
- High surge capability for robust performance under transient conditions
- Twin tower package design for efficient mounting and heat dissipation
- Super fast recovery characteristics suitable for high-frequency applications
Applications
- High frequency inverters
- Free wheeling circuits
- Polarity protection systems
Procurement Notes
Verify the specific part number against official GeneSiC Semiconductor documentation to confirm technical specifications. Ensure compatibility with system requirements regarding voltage ratings, current capacity, and thermal management. Confirm package type and terminal configuration match the intended mechanical design. Check for any recent product discontinuation notices or lifecycle status updates before finalizing procurement plans.
Selection Notes
Select this component based on its 100 V reverse voltage rating and 300 A average forward current capability. Consider the 100 ns reverse recovery time for high-speed switching applications. Evaluate the 0.40 °C/W thermal resistance for adequate heat sinking solutions. Ensure the twin tower package fits the available board space and mounting constraints within the target electronic assembly.
Part Context
The MUR30010CT belongs to the MUR30005CT through MUR30020CTR series of silicon super fast recovery diodes. This family offers varying voltage ratings from 50 V to 200 V while maintaining consistent current handling and package dimensions. The series is designed for power electronics requiring reliable rectification and fast switching performance in demanding industrial environments.
Replacement Considerations
Compatible substitutes within the same series include MUR30005CT and MUR30020CT, provided their respective voltage ratings align with the circuit requirements. Verify that alternative components maintain identical package dimensions and pin configurations to ensure mechanical interchangeability without redesigning the mounting structure.
