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The GeneSiC Semiconductor MUR30010CTR is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 100 V and an average forward current of 300 A per package. It features a maximum instantaneous forward voltage of 1.0 V and a peak forward surge current capability of 2750 A per leg. The device operates within a junction temperature range of -55 °C to +150 °C, with a maximum thermal resistance from junction to case of 0.40 °C/W per leg.
Verify the specific part number against official manufacturer documentation to confirm availability status. Check for any product discontinuation notifications or end-of-life notices prior to procurement. Ensure that the Twin Tower package dimensions and screw mount requirements align with the target application hardware specifications.
Select this component based on its 100 V reverse voltage rating and 300 A continuous current capacity. Consider the 0.40 °C/W thermal resistance for heat sink sizing. Verify compatibility with the Twin Tower mounting style and ensure the operating temperature range meets the environmental requirements of the intended system.
This module belongs to the MUR300 series of silicon super fast recovery diodes. The series offers various voltage ratings from 50 V to 200 V while maintaining a consistent 300 A current rating. The Twin Tower package provides a standardized form factor for high-power applications requiring robust mechanical mounting and efficient thermal management.
MUR30005CTR
The maximum reverse recovery time is 100 ns.
Yes, devices with the 'R' suffix have reversed leads compared to standard configurations.