ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DIODE MODULE GP 200V 150A 2TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：200 V
- Current - Average Rectified (Io) (per Diode)：150A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 100 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：90 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Twin Tower
- Supplier Device Package：Twin Tower
- Grade：-
- Qualification：-
Download product information
Overview
The MUR30020CT is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a Twin Tower package with screw mount installation. The device provides a repetitive peak reverse voltage of 200 V and an average forward current of 300 A per leg. Key electrical parameters include a maximum instantaneous forward voltage of 1.0 V, a maximum reverse recovery time of 100 ns, and a thermal resistance from junction to case of 0.40 °C/W. The unit operates within a temperature range of -55°C to +150°C.
Feature Summary
- High surge capability for robust operation under transient conditions
- Twin Tower package design for efficient mounting and heat dissipation
- Super fast recovery characteristics suitable for high-frequency applications
Applications
- High frequency inverters
- Free wheeling circuits
- Polarity protection systems
Procurement Notes
Verify the specific manufacturer designation on the component marking, as sources indicate GeneSiC Semiconductor branding alongside Navitas Semiconductor listings. Confirm the exact suffix requirements for lead configuration if ordering variants with reversed leads. Ensure the procurement channel supports the Twin Tower package dimensions and screw mount specifications required for your assembly process.
Selection Notes
Select this module when a 200 V rating and 300 A continuous current capacity are required in a compact form factor. The low thermal resistance of 0.40 °C/W facilitates effective heat management in high-power environments. Consider the 100 ns reverse recovery time for switching speed requirements. Verify that the operating environment stays within the specified -55°C to +150°C junction temperature limits.
Part Context
This component belongs to the MUR300 series of silicon super fast recovery diodes. The series offers various voltage ratings ranging from 50 V to 200 V while maintaining a consistent 300 A current handling capability. The Twin Tower package is standard across the series, providing a unified mechanical footprint for different voltage applications within power conversion designs.
Replacement Considerations
MUR30020CTR serves as a direct functional substitute with reversed leads. Other models in the MUR300 series may replace this part if voltage or current ratings differ to match specific circuit requirements.
