MUR30020CTR

$83.93

Description：DIODE MODULE GP 200V 150A 2TOWER
Series：-

SKU:5da960dbb981 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIODE MODULE GP 200V 150A 2TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Anode
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：200 V
Current - Average Rectified (Io) (per Diode)：150A
Voltage - Forward (Vf) (Max) @ If：1.3 V @ 100 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：90 ns
Current - Reverse Leakage @ Vr：25 µA @ 50 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Twin Tower
Supplier Device Package：Twin Tower
Grade：-
Qualification：-

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MUR30020CTR

Overview

The MUR30020CTR is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a Twin Tower package with screw mount installation. The device supports a repetitive peak reverse voltage of 200 V and an average forward current of 300 A per leg. Key electrical parameters include a maximum instantaneous forward voltage of 1.0 V, a maximum reverse recovery time of 100 ns, and a peak forward surge current of 2750 A. Thermal resistance from junction to case is 0.40 °C/W per leg. Operating and storage temperatures range from -55°C to +150°C.

Feature Summary

High surge capability for robust performance under transient conditions
Twin Tower package design facilitating efficient thermal management
Super fast recovery characteristics suitable for high-frequency applications

Applications

High frequency inverters
Free wheeling circuits
Polarity protection systems

Procurement Notes

Verify the specific manufacturer designation as sources list both GeneSiC Semiconductor and Navitas Semiconductor. Confirm the component status, as documentation indicates end-of-life notifications. Ensure the Twin Tower package dimensions match the target board layout before procurement.

Selection Notes

Select this module for applications requiring high current handling and fast switching speeds. The 200 V rating suits low-voltage high-current environments. Verify that the 0.40 °C/W thermal resistance meets the system's heat dissipation requirements. Consider the screw mount style for mechanical stability in industrial settings.

Part Context

This component belongs to the MUR300 series of silicon super fast recovery diodes. The series offers various voltage ratings from 50 V to 200 V while maintaining a consistent 300 A current capacity. The Twin Tower package is standard across these modules, providing a unified form factor for different voltage requirements within power conversion designs.