MUR30040CT

MUR30040CT

$83.93
  • Description:DIODE MODULE GP 400V 150A 2TOWER
  • Series:-

SKU:3affcd6bdea2 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE GP 400V 150A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):400 V
  • Current - Average Rectified (Io) (per Diode):150A
  • Voltage - Forward (Vf) (Max) @ If:1.5 V @ 100 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):90 ns
  • Current - Reverse Leakage @ Vr:25 µA @ 50 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

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MUR30040CT

Overview

The GeneSiC Semiconductor MUR30040CT is a silicon super fast recovery diode module featuring a twin tower package. It provides a repetitive peak reverse voltage of 400 V and an average forward current rating of 300 A per package. The device exhibits a maximum instantaneous forward voltage of 1.3 V and a maximum reverse recovery time of 110 ns. It supports a peak forward surge current of 2750 A and operates within a junction temperature range of -55 to 150 °C.

Feature Summary

  • High surge capability for robust performance under transient conditions
  • Twin tower package design for efficient mounting and thermal management
  • Super fast recovery characteristics suitable for high-frequency applications

Applications

  • High frequency inverters
  • Free wheeling circuits
  • Polarity protection systems

Procurement Notes

Verify the specific datasheet revision and manufacturer documentation before procurement, as component specifications may vary between production batches. Confirm that the twin tower package dimensions align with the intended mechanical assembly requirements. Ensure that thermal management solutions are adequate for the specified operating temperature range and power dissipation levels during system integration.

Selection Notes

Select this component when a high-current rectifier with fast switching speeds is required. The 400 V rating suits low-voltage high-power conversion stages. Consider the 0.40 °C/W thermal resistance for heat sink sizing. Verify that the 110 ns reverse recovery time meets the circuit's switching frequency constraints without causing excessive losses or electromagnetic interference issues in the design.

Part Context

This module belongs to the MUR300 series of silicon super fast recovery diodes from GeneSiC Semiconductor. The series includes variants with different voltage ratings ranging from 400 V to 600 V. All models share the same twin tower package form factor and similar current handling capabilities, allowing for standardized mechanical designs across different voltage requirements within the same product family.

Replacement Considerations

Direct replacements include other MUR300 series modules such as the MUR30060CT for higher voltage applications. Cross-brand equivalents must match the 300 A current rating, 400 V blocking voltage, and twin tower package dimensions. Verify that substitute components meet the same 110 ns reverse recovery time specification to ensure circuit compatibility.

MUR30040CTMUR30040CT
$83.93
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