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Product Detailed Parameters
- Description：DIODE MODULE GP 50V 200A 2TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：50 V
- Current - Average Rectified (Io) (per Diode)：200A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 125 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：90 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Twin Tower
- Supplier Device Package：Twin Tower
- Grade：-
- Qualification：-
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Overview
The MUR40005CT is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a Twin Tower package with screw mount installation. The device supports an average forward current of 400 A per package and a peak forward surge current of 3300 A per leg. The repetitive peak reverse voltage is rated at 50 V, with a maximum instantaneous forward voltage of 1.0 V. The module operates within a junction temperature range of -55 °C to +150 °C and exhibits a maximum reverse recovery time of 150 ns.
Feature Summary
- High surge capability designed for robust power handling
- Twin Tower package configuration for efficient thermal management
- Super fast recovery characteristics minimizing switching losses
Applications
- High frequency rectification in power supplies
- Free-wheeling diodes in motor drives
- DC-DC converter circuits
Procurement Notes
Verify the specific part number suffix against official documentation to confirm terminal configuration details. Ensure that the required reverse voltage rating aligns with the system's peak operating conditions. Confirm thermal interface requirements match the specified junction-to-case thermal resistance values for proper heat sinking implementation.
Selection Notes
Select this component when high average current capacity and fast recovery speeds are required in a compact module form factor. Consider the Twin Tower package for applications needing robust mechanical mounting and efficient heat dissipation. Evaluate the 50 V reverse voltage rating against circuit transient spikes to ensure adequate safety margins during operation.
Part Context
This module belongs to the MUR400 series of silicon super fast recovery diodes from GeneSiC Semiconductor. The series offers various voltage ratings ranging from 50 V to 200 V while maintaining consistent current capabilities. These modules are engineered for high-performance power electronics requiring reliable switching and low reverse recovery charge.
Replacement Considerations
MUR40010CT
FAQ
What is the maximum reverse recovery time for the MUR40005CT?
The maximum reverse recovery time is 150 ns.
Does the MUR40005CT require ESD precautions during handling?
No, the device is not ESD sensitive.
What is the peak forward surge current rating per leg?
The peak forward surge current is 3300 A per leg.
