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Product Detailed Parameters
- Description：DIODE MODULE GP 100V 200A 2TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：200A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 125 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：90 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Twin Tower
- Supplier Device Package：Twin Tower
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor MUR40010CTR is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 100 V. It provides an average forward current of 400 A per package and supports a peak forward surge current of 3300 A per leg. The device features a maximum instantaneous forward voltage of 1.0 V and a maximum reverse recovery time of 150 ns. It operates within a junction temperature range of -55 °C to +150 °C, with a thermal resistance from junction to case of 0.35 °C/W.
Feature Summary
- High surge capability designed for demanding power applications
- Utilizes Twin Tower package configuration for efficient mounting
- Not sensitive to electrostatic discharge
Applications
- High frequency switching power supplies
- DC-DC converter circuits
- Motor drive systems
Procurement Notes
Verify the specific part number against official datasheets to confirm technical specifications before procurement. Ensure that the ordering suffix matches the required terminal configuration, as variations may exist. Confirm RoHS compliance status through manufacturer documentation. Validate that the component meets all necessary electrical ratings for the intended application environment.
Selection Notes
Select this component based on its 100 V reverse voltage rating and 400 A average forward current capacity. Consider the 150 ns reverse recovery time for high-frequency efficiency requirements. Evaluate the 0.35 °C/W thermal resistance for heat dissipation needs in the system design. Ensure the operating temperature range aligns with the environmental conditions of the final assembly.
Part Context
This module belongs to the MUR400 series of silicon super fast recovery diodes. The series offers various voltage ratings ranging from 50 V to 200 V while maintaining consistent current handling capabilities. These modules are engineered for robust performance in industrial power electronics applications requiring reliable rectification and fast switching characteristics.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 100 V rating, 400 A current capacity, and Twin Tower package dimensions. Verify compatibility with existing thermal management solutions.
