MUR40020CT

Overview

The GeneSiC Semiconductor MUR40020CT is a silicon super fast recovery diode module. It features a Twin Tower package with screw mount installation. The device supports an average forward current of 400 A per package and a peak forward surge current of 3300 A per leg. It has a repetitive peak reverse voltage of 200 V and a maximum instantaneous forward voltage of 1.0 V. The module operates within a temperature range of -55°C to +150°C, with a maximum thermal resistance of 0.35 °C/W.

Feature Summary

• High surge capability design
• Twin Tower package configuration
• Super fast recovery characteristics

Applications

• High power rectification circuits
• Industrial power supplies
• Motor drive systems

Procurement Notes

Verify the specific manufacturer designation on official documentation, as sources may list Navitas Semiconductor or GeneSiC Semiconductor for this component series. Confirm the exact part number suffix against the datasheet to ensure correct terminal configuration and electrical ratings before procurement.

Selection Notes

Select this module for applications requiring high current handling and robust surge protection. Ensure the cooling solution accommodates the specified thermal resistance. Verify that the operating voltage does not exceed the 200 V rating and that the system can handle the 3300 A surge current per leg.

Part Context

This component belongs to the MUR400 series of silicon super fast recovery diodes. The series includes variants with different reverse voltage ratings from 50 V to 200 V. All models share the same 400 A average forward current rating and Twin Tower package style.

Replacement Considerations

MUR40020CTR