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Product Detailed Parameters
- Description：DIODE MODULE GP 600V 200A 2TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：600 V
- Current - Average Rectified (Io) (per Diode)：200A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 125 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：180 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Twin Tower
- Supplier Device Package：Twin Tower
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor MUR40060CTR is a silicon super fast recovery diode module featuring a Twin Tower package. It provides a repetitive peak reverse voltage of 600 V and an average forward current rating of 420 A per package. The device exhibits a maximum instantaneous forward voltage of 1.7 V at Tj = 25 °C with IFM = 200 A, and a maximum reverse recovery time of 600 ns. Thermal resistance from junction to case is 0.35 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.
Feature Summary
- High surge capability for robust performance under transient conditions
- Twin Tower package design for efficient thermal management
- Super fast recovery characteristics suitable for high-frequency applications
Applications
- High-power DC-DC converters
- Induction heating systems
- Uninterruptible power supplies (UPS)
- Motor drive circuits
Procurement Notes
Verify the specific part number suffix against official documentation to confirm terminal configuration details. Confirm availability status as discontinuation notices may apply. Ensure compliance with RoHS requirements before procurement. Cross-reference datasheet electrical parameters with system design specifications to validate operational limits.
Selection Notes
Select this component based on its 600 V reverse voltage rating and 420 A average forward current capacity. Consider the 0.35 °C/W thermal resistance for heatsink design. Evaluate the 600 ns reverse recovery time against switching frequency requirements. Verify the Twin Tower package dimensions for mechanical integration compatibility.
Part Context
This module belongs to the MUR400 series of silicon super fast recovery diodes. The series includes variants with different voltage ratings such as 400 V and 600 V. The 'CTR' suffix indicates a specific terminal configuration within the Twin Tower package family designed for high-current power electronics applications.
Replacement Considerations
Consult official manufacturer documentation for confirmed substitute part numbers. Verify that any replacement matches the 600 V VRRM, 420 A IF(AV), and 0.35 °C/W RΘJC specifications. Ensure package compatibility and terminal configuration alignment.
