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The MURB1620CT-T-F is a surface mount super-fast rectifier manufactured by Diodes Incorporated. It features a dual common anode configuration within a D2PAK package. Key electrical parameters include a maximum repetitive peak reverse voltage of 200 V and an average rectified output current of 16 A at a case temperature of 125°C. The device exhibits a maximum recovery time of 25 ns and a forward voltage of 0.975 V at 8.0 A. It supports a non-repetitive peak forward surge current of 100 A and operates within a junction temperature range of -65 to +150°C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm tape and reel packaging specifications. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the datasheet revision number to validate that all electrical characteristics and mechanical dimensions align with your design specifications before finalizing procurement orders.
Select this component when a dual common anode topology is required for bridge or half-wave rectification. The 25 ns recovery time makes it suitable for high-frequency operations where standard rectifiers would cause excessive losses. Verify thermal management capabilities, as the 16 A rating depends on adequate heat sinking via the D2PAK exposed pad. Consider the 200 V blocking voltage relative to the system's peak reverse voltage stresses.
This part belongs to the MURB series of surface mount ultrafast rectifiers from Diodes Incorporated. It serves as the surface mount equivalent to through-hole variants like the MUR1620CT. The series is engineered for high-efficiency power conversion applications. The D2PAK package provides robust thermal performance and automated assembly compatibility compared to traditional leaded packages.
Direct pin-compatible replacements include the MURB1620CTR4G from onsemi. Verify that substitute components maintain identical voltage, current, and recovery time ratings. Confirm that the alternative package matches the D2PAK footprint and thermal pad dimensions to ensure proper board integration without redesign.
The typical junction capacitance per element is 85 pF, measured at 1.0 MHz and an applied reverse voltage of 4.0 V DC.
The device supports 16 A at a case temperature of 125°C. Current must be derated linearly as the case temperature increases beyond this point, as shown in the forward current derating curve.
The maximum operating junction temperature is +150°C. The storage temperature range also extends from -65°C to +150°C.