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Product Detailed Parameters
- Description：DIODE ARRAY GP 600V 8A D2PAK
- Series：SWITCHMODE™
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：600 V
- Current - Average Rectified (Io) (per Diode)：8A
- Voltage - Forward (Vf) (Max) @ If：1.5 V @ 8 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：60 ns
- Current - Reverse Leakage @ Vr：10 µA @ 600 V
- Operating Temperature - Junction：-65°C ~ 175°C
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The MURB1660CTT4G is a silicon ultrafast recovery rectifier manufactured by onsemi, housed in a D2PAK (TO-263) surface-mount package. It features a dual common-cathode configuration with two internal elements. The device supports a maximum repetitive peak reverse voltage of 600V and an average forward rectified current of 8A per diode. Key electrical characteristics include a maximum forward voltage drop of 1.5V at 8A, a peak non-repetitive forward surge current of 100A, and a typical reverse recovery time of 60ns. The component operates within a junction temperature range of -65°C to +175°C.
Feature Summary
- Ultrafast recovery technology designed for high-frequency switching applications
- Dual common-cathode configuration integrating two independent rectifiers
- High thermal stability supporting operation up to 175°C junction temperature
Applications
- Switching power supplies
- Inverter circuits
- Free-wheeling diode implementations
Procurement Notes
Verify the complete part number suffix, as official documentation typically lists this component as MURB1660CTT4G. Confirm that the 'G' suffix indicates lead-free and halogen-free compliance consistent with RoHS standards. Ensure the ordering code matches the specific tape-and-reel packaging quantity of 800 units to avoid discrepancies in procurement specifications.
Selection Notes
Select this component when a high-voltage, high-current surface-mount solution is required for efficient power conversion. The 60ns reverse recovery time makes it suitable for reducing switching losses in high-frequency environments. Compare against through-hole alternatives like the MUR1660CTG if board space allows, or consider lower-voltage variants such as the MURB1620CTRT4G for 200V applications requiring common-anode configurations.
Part Context
This device belongs to the MURB series of SWITCHMODE power rectifiers from onsemi. It shares the same die specifications as the through-hole MUR1660CTG but utilizes a D2PAK package for automated surface-mount assembly. The series is engineered to provide superior performance compared to standard fast recovery diodes, offering improved efficiency in modern power electronics designs.
Replacement Considerations
Direct pin-compatible replacements include the MUR1660CTG for through-hole applications and the NRVUB1660CTT4G for alternative surface-mount sourcing. Verify that substitute components maintain the 600V rating, 8A current capacity, and 60ns reverse recovery time to ensure circuit compatibility.
