MURB1660CTT4G

Overview

The MURB1660CTT4G is an ultrafast recovery rectifier manufactured by onsemi, featuring a dual common cathode configuration housed in a D2PAK (TO-263) surface-mount package. It supports a maximum repetitive peak reverse voltage of 600 V and a continuous forward current of 16 A per diode. The device exhibits a typical forward voltage drop of 1.5 V at 8 A and a peak reverse recovery time of 60 ns. Operating within a temperature range of -65 °C to +175 °C, it handles a non-repetitive peak surge current of 100 A.

Feature Summary

• Ultrafast recovery characteristics with a 60 ns reverse recovery time for efficient high-frequency switching
• Dual common cathode architecture integrating two independent diodes in a single three-terminal package
• High thermal stability enabling reliable operation up to a junction temperature of 175 °C

Applications

• High-frequency switch-mode power supplies
• Free-wheeling rectification in DC-DC converters
• Isolated output rectification in offline flyback topologies

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout compatibility and electrical ratings. Ensure the component matches the required voltage and current specifications for the target circuit design. Confirm RoHS compliance status through manufacturer documentation prior to integration into production assemblies.

Selection Notes

Select this component when designing circuits requiring fast switching speeds and high voltage blocking capabilities in a compact surface-mount form factor. The dual common cathode arrangement simplifies layout for synchronous or isolated rectification stages. Evaluate thermal management requirements based on the 16 A current rating and package thermal resistance.

Part Context

This part belongs to the MURB series of ultrafast recovery rectifiers from onsemi, designed for demanding power conversion applications. The D2PAK package provides robust mechanical stability and efficient heat dissipation compared to smaller surface-mount options. It serves as a bridge between standard recovery diodes and faster silicon carbide alternatives in mid-power designs.

Replacement Considerations

Direct substitutes include the MUR1660CTG for through-hole applications and the NRVUB1660CTT4G for similar surface-mount requirements. Verify that alternative parts match the 600 V rating, 16 A current capacity, and 60 ns recovery time before substitution.