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The MURD620CT1G is a silicon ultrafast rectifier from onsemi, featuring a common cathode dual-diode configuration in a surface-mount TO-252 (DPAK) package. It provides a maximum average forward rectified current of 6A and a repetitive peak reverse voltage of 200V. The device exhibits a fast recovery time of 35ns and a peak non-repetitive forward surge current capability of 50A. Operating temperatures range from -65°C to 175°C junction temperature.
Verify the complete part number suffix, typically 'G' for lead-free/RoHS compliance, as distributors may list base codes. Confirm the specific reel quantity and tape-and-reel specifications against the manufacturer's official packaging data sheet before ordering. Ensure the requested variant matches the required automotive or industrial qualification status if applicable.
Select this component when a 6A current rating and 200V blocking voltage are required in a compact DPAK footprint. The 35ns recovery time makes it suitable for higher frequency operations compared to standard soft-recovery devices. Evaluate thermal management requirements based on the 175°C maximum junction temperature limit and the specific ambient conditions of the target enclosure.
This device belongs to onsemi's SwitchMODE Power Rectifier family, designed specifically for high-efficiency power conversion circuits. The MURD series utilizes advanced ultrafast technology to minimize reverse recovery charge, thereby reducing switching losses and electromagnetic interference in modern power supply architectures.
Direct pin-compatible substitutes include the MURD620CTT4G from onsemi. Cross-manufacturer equivalents such as the RURD620CCS9A from Fairchild/ON Semiconductor offer similar electrical characteristics in the same TO-252AA package form factor.