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The MURD620CTG is a silicon ultrafast rectifier diode manufactured by onsemi, housed in a TO-252 (DPAK) surface-mount package with three pins. It features a dual common-cathode configuration providing a maximum average forward current of 6 A and a peak repetitive reverse voltage of 200 V. The device exhibits a maximum forward voltage of 1.2 V at rated current and a peak non-repetitive forward surge current capability of 50 A. Key switching characteristics include a peak reverse recovery time of 35 ns. The component operates within a junction temperature range from -65°C to 175°C.
Verify the specific suffix against official datasheets to confirm pinout and electrical tolerances. Ensure the procurement channel provides original manufacturer documentation to validate authenticity. Cross-reference the date code and marking with current production standards to avoid obsolete inventory risks during integration.
Select this component when ultrafast recovery times are critical to minimize switching losses in high-frequency topologies. The TO-252 package offers a balance between thermal dissipation and board space efficiency. Verify that the 200 V rating exceeds the circuit's peak inverse voltage requirements under all operating conditions.
This device belongs to the SWITCHMODE family of ultrafast power rectifiers designed for demanding power conversion environments. It serves as a successor to earlier plastic-encapsulated ultrafast diodes, offering improved thermal performance and consistent switching characteristics suitable for modern compact power supply designs.
MURD620CTT4G
The peak reverse recovery time is specified as 35 ns.
Yes, the device is capable of conducting avalanche currents up to its rated limits.
The maximum operating junction temperature is 175°C.