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Product Detailed Parameters
- Description：DIODE MODULE GP 200V 50A TO-244
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：200 V
- Current - Average Rectified (Io) (per Diode)：50A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 50 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：75 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：TO-244AB
- Supplier Device Package：TO-244
- Grade：-
- Qualification：-
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Overview
The MURF10020 is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a 200V reverse voltage rating and a 100A average forward current capacity. The component utilizes a TO-244 package with screw mount installation style. It operates within a temperature range of -55°C to +150°C. This discrete power module is designed for high-performance rectification applications requiring rapid switching characteristics.
Feature Summary
- Super fast recovery silicon technology for efficient switching
- High current handling capability in a robust module format
- Wide operating temperature range for thermal stability
Applications
- High-frequency power supply rectification
- Industrial motor drive circuits
- DC-DC converter output stages
Procurement Notes
Verify the specific datasheet version from GeneSiC Semiconductor or authorized distributors to confirm electrical parameters and mechanical dimensions. Ensure the TO-244 package compatibility with your mounting hardware. Check RoHS compliance status if required for your assembly process. Confirm lead times and availability directly with suppliers as inventory levels fluctuate.
Selection Notes
Select this component when a 200V blocking voltage and 100A continuous current are required in a single module. The TO-244 package offers a balance of thermal performance and board space efficiency compared to larger modules. Consider the super fast recovery特性 for reducing switching losses in high-frequency applications. Evaluate thermal management requirements based on the specified junction temperature limits.
Part Context
The MURF10020 belongs to GeneSiC Semiconductor's discrete diode module lineup, specifically focusing on silicon-based fast recovery products. Unlike their silicon carbide (SiC) MOSFETs, this part utilizes traditional silicon technology optimized for speed. It serves as a solution for applications where SiC devices may be over-specified or cost-prohibitive, while still demanding faster performance than standard recovery diodes.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. When replacing, ensure the new component matches the 200V Vr, 100A If, and TO-244 package specifications. Verify that the replacement's reverse recovery time meets the circuit's switching frequency requirements.
