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The MURF10020R is a silicon super fast recovery rectifier manufactured by GeneSiC Semiconductor. It features a single configuration with a repetitive reverse voltage of 20 V and a forward current rating of 100 A. The device exhibits a maximum forward voltage of 1.3 V and a reverse leakage current of 50 uA at rated conditions. Its super fast recovery time is specified as 75 ns, supporting high-frequency switching applications. The component operates within a junction temperature range of -55 °C to +150 °C and utilizes a stud mount installation style in a DO-5 package.
Verify the manufacturer designation on official datasheets, as some listings may attribute this part to Navitas Semiconductor due to corporate acquisitions. Confirm the specific suffix 'R' corresponds to the required packaging or lead configuration. Ensure the stud mount interface matches your heatsink specifications before procurement.
Select this component when low reverse recovery charge is critical for minimizing switching losses. The 20 V rating suits low voltage output stages. Verify that the 100 A continuous current rating aligns with the thermal design constraints of the target application environment.
This part belongs to the MURF series of super fast recovery rectifiers from GeneSiC Semiconductor. These devices are engineered for applications demanding rapid turn-off times and robust performance under high thermal stress. The series typically includes various voltage and current ratings to support diverse power conversion architectures.
Consult official cross-reference guides for verified substitutes. Generic replacements must match the 20 V reverse voltage, 100 A forward current, and 75 ns recovery time specifications to ensure circuit compatibility.