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The MURF10040 is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a TO-244AB package and provides a repetitive peak reverse voltage of 400 V with an average rectified forward current capacity of 100 A. The device is designed for high surge capability applications, operating within a junction temperature range of -55 °C to 150 °C. This component serves as a robust solution for power conversion systems requiring reliable rectification.
Verify the specific manufacturer designation, as historical records indicate GeneSiC Semiconductor was acquired by Navitas Semiconductor. Confirm the current production status, as some sources list this part as obsolete or end-of-life. Ensure the datasheet matches the exact package type and electrical ratings required for your design before ordering.
Select this component when a 400V rating and 100A continuous current are required in a TO-244AB form factor. Consider the thermal management requirements associated with the three-tower package design. Evaluate the super fast recovery characteristics against the switching frequency needs of the target application circuit.
This diode belongs to the MURF series of silicon super fast recovery rectifiers from GeneSiC Semiconductor. The series includes variants with different voltage and current ratings, such as the MURF30040 and MURF10060. These modules are engineered for high-performance power electronics applications requiring low reverse recovery charge.
Public confirmed substitute part numbers are not available in the provided documentation. Users should consult the manufacturer's official cross-reference guides or contact technical support directly for compatible alternatives if this specific model is discontinued.