SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MURF1030CT is a silicon rectifier diode manufactured by SMC Diode Solutions. It features a maximum repetitive reverse voltage of 300 V and an average forward current rating of 10 A. The device utilizes a fast recovery technology with a typical reverse recovery time of 75 ns. It is housed in a TO-220AB package, providing a robust surface for thermal management. The component operates within a junction temperature range of -55°C to +175°C and exhibits a maximum forward voltage drop of 1.4 V at the rated current.
Verify the specific manufacturer source when ordering, as the MURF1030CT designation may be utilized by multiple semiconductor fabricators including Sangdest Microelectronics and others. Confirm that the received component matches the required electrical specifications and physical dimensions of the TO-220AB package. Ensure compliance with RoHS directives if restricted substances are a constraint for the assembly process.
Select this component for designs requiring fast recovery performance with a 300 V blocking voltage and 10 A continuous current capacity. The TO-220AB package facilitates effective heat dissipation through direct mounting to a heatsink. Consider the 75 ns reverse recovery time when evaluating switching losses in high-frequency topologies compared to standard recovery alternatives.
This part belongs to the family of ultrafast or fast plastic rectifiers designed for general-purpose power conversion. These devices typically replace slower silicon rectifiers to improve efficiency in modern switching power supplies. The construction relies on planar passivation techniques to ensure reliability under thermal cycling conditions common in industrial electronics.
Public confirmed substitute part numbers include MUR2030CT and MURF1030WT. Verify pinout compatibility and thermal resistance values before substituting to ensure the replacement fits the existing footprint and cooling requirements.