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Product Detailed Parameters
- Description：DIODE MODULE GP 100V 100A TO-244
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：100A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 100 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：75 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：TO-244AB
- Supplier Device Package：TO-244
- Grade：-
- Qualification：-
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Overview
The MURF20010R is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a TO-244AB package and is designed for high-power applications. Key electrical parameters include a maximum repetitive peak reverse voltage of 100V, an average forward rectified current of 200A, and a maximum non-repetitive surge forward current of 600A. The device exhibits a typical reverse recovery time of 75ns and a maximum reverse leakage current of 25µA at 100V. The forward voltage drop is typically 1.3V at 200A.
Feature Summary
- Utilizes super fast recovery silicon technology to minimize switching losses and electromagnetic interference in high-frequency circuits.
- Engineered with a robust TO-244AB baseplate mount package to facilitate efficient thermal dissipation under heavy load conditions.
- Provides high surge current capability to withstand transient overloads without compromising device integrity.
Applications
- High-efficiency DC-DC converters
- Induction heating power supplies
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct pin configuration and thermal interface specifications. Confirm that the procurement channel provides original factory-sealed components to maintain moisture sensitivity level integrity. Cross-reference the part number with the latest revision history to avoid obsolete variants.
Selection Notes
Select this component when designing circuits requiring low reverse recovery charge and high current handling capacity. Ensure the application's operating temperature range aligns with the device's specified junction temperature limits. Evaluate the thermal resistance requirements of the heatsink system to guarantee reliable operation under continuous 200A loads.
Part Context
This module belongs to the MURF series of super fast recovery diodes from GeneSiC Semiconductor. The series is characterized by optimized silicon carbide-compatible performance using advanced silicon planar technology. It serves as a critical component in modern power electronics where efficiency and speed are paramount.
Replacement Considerations
Direct substitutes must match the 100V rating, 200A current capacity, and TO-244AB footprint. Verify equivalent reverse recovery times and forward voltage characteristics to maintain circuit performance. Consult manufacturer cross-reference lists for validated alternatives.
