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Product Detailed Parameters
- Description：DIODE MOD GP 400V 100A TO244AB
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：400 V
- Current - Average Rectified (Io) (per Diode)：100A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 100 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：90 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：TO-244AB
- Supplier Device Package：TO-244AB
- Grade：-
- Qualification：-
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Overview
The MURF20040R is a silicon super fast recovery rectifier module manufactured by GeneSiC Semiconductor. It features a three-tower package design with an electrically isolated base plate, suitable for chassis mounting in the TO-244AB form factor. The device supports a repetitive peak reverse voltage of 400V and offers a maximum average forward current of 200A. Operating temperatures range from -55°C to 150°C for both junction and storage conditions. This component is designed for high surge capability applications.
Feature Summary
- Electrically isolated base plate for enhanced safety
- High surge current handling capability
- Super fast recovery silicon technology
Applications
- Industrial power supplies
- Motor drive systems
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific suffix 'R' indicates reversed leads configuration as documented in official GeneSiC datasheets. Confirm RoHS compliance status and lead-free specifications prior to ordering. Ensure thermal management solutions match the TO-244AB package requirements for optimal performance at rated currents.
Selection Notes
Select this module when high current capacity and fast recovery characteristics are required in a compact isolated package. Compare against standard non-isolated alternatives if electrical isolation is not needed. Consider thermal resistance values for heat sink selection based on ambient operating conditions and duty cycle requirements.
Part Context
This part belongs to the MURF series of super fast recovery diodes from GeneSiC Semiconductor. It shares architectural similarities with other models in the family but differs in voltage ratings and current capacities. The three-tower package allows for efficient parallel operation and improved thermal dissipation compared to traditional modules.
Replacement Considerations
Direct substitutes may include MURF20060 or MURT40040 depending on voltage and current requirements. Verify pinout compatibility due to potential lead reversal differences indicated by the 'R' suffix. Cross-reference thermal and electrical parameters to ensure equivalent performance in existing circuit designs.
