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The MURHB840CTT4G is a high-speed rectifier diode manufactured by onsemi. It features a dual common cathode configuration housed in a TO-220AB package. The device is rated for a maximum repetitive peak reverse voltage of 400 V and an average forward current of 4 A per diode. Key electrical characteristics include a maximum forward voltage drop of 2.2 V at specified conditions and a maximum reverse recovery time of 28 ns. The component supports a maximum surge forward current of 100 A and operates within a junction temperature range up to 175°C.
Verify the specific suffix 'T4G' against official manufacturer documentation to confirm tape-and-reel packaging and lead-free status. Ensure the part number matches the exact series designation, as variations may exist between standard and high-speed variants. Cross-reference the datasheet revision date to validate current supply status and compliance certifications before procurement.
Select this component when designing circuits requiring fast recovery times and moderate current handling in a through-hole package. Compare the 28 ns reverse recovery time against system switching frequencies to minimize switching losses. Evaluate the thermal resistance of the TO-220AB package relative to the expected heat dissipation requirements under continuous load conditions.
This component belongs to the MURH series of ultrafast rectifiers from onsemi. The series is characterized by high efficiency and low forward voltage drop. The MURHB variant typically denotes specific internal structure optimizations for improved ruggedness compared to standard MURH parts. It serves as a discrete semiconductor solution for power conversion stages.
Consult official substitution guides for equivalent dual common cathode ultrafast diodes. Verify pinout compatibility and thermal specifications when considering alternatives from other manufacturers.